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| 2SK1299 L , 2SK1299 S Silicon N-Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features Low on-resistance High speed switching Low drive current 4 V gate drive device - Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive * * * * 12 3 2, 4 12 3 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 100 20 3 12 3 20 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1299 L , 2SK1299 S Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static Drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 100 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 10 V * --------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -- -- 10 100 A A -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 2.4 -- -- -- -- -- -- -- -- -- 0.25 0.30 4.0 400 165 45 5 35 160 60 1.0 2.0 0.35 0.45 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 3 A, VGS = 0 IF = 3 A, VGS = 0, diF/dt = 50 A/s ID = 2 A, VGS = 10 V, RL = 15 V -------------------------------------------------------------------------------------- -------------------- --------------------- ID = 2 A, VGS = 4 V * ID = 2 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 135 -- ns -------------------------------------------------------------------------------------- 2SK1299 L , 2SK1299 S Power vs. Temperature Derating 30 Channel Dissipation Pch (W) 50 Maximum Safe Operation Area Operation in this area 20 is limited by RDS (on) 10 Drain Current ID (A) 10 s 0 10 20 5 2 1 0.5 0.2 0.1 PW s = 10 1 m m s s n tio ra C) pe O 25 C= D TC ( (1 10 Sh ot ) Ta = 25C 1 2 5 10 20 50 100 200 500 1000 Drain to Source Voltage VDS (V) 0 50 100 Case Temperature TC (C) 150 0.05 Typical Output Characteristics 10 10 V 5V 4.5 V 4V 4 3.5 V Drain Current ID (A) 5 Typical Transfer Characteristics VDS = 10 V Pulse Test 8 Drain Current ID (A) 6 3 4 3V VGS = 2.5 V Pulse Test 2 2 1 25C 75C TC = -25C 0 2 4 6 8 10 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK1299 L , 2SK1299 S Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () 2.0 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 1.6 ID = 5 A 1.2 5 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 2 1 0.5 VGS = 4 V 0.2 0.1 0.05 0.2 10 V 0.8 2A 0.4 1A 0 6 2 4 8 10 Gate to Source Voltage VGS (V) 0.5 1 5 2 10 Drain Current ID (A) 20 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) 0.5 ID = 5 A 2A 1A 5A 1A 0.2 10 V 2A 10 Forward Transfer Admittance vs. Drain Current VDS = 10 V 5 Pulse Test TC = -25C 0.4 VGS = 4 V 0.3 2 75C 1 0.5 25C 0.1 Pulse Test 0 -40 0 40 120 80 Case Temperature TC (C) 160 0.2 0.1 0.05 1.0 2 0.2 1 0.5 Drain Current ID (A) 5 2SK1299 L , 2SK1299 S Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 200 Capacitance C (pF) 100 50 100 1000 Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss 10 VGS = 0 f = 1 MHz 1 0 10 20 30 40 50 Drain to Source Voltage VDS (V) 20 10 5 0.1 di/dt = 50 A/s VGS = 0, Ta = 25C Pulse Test 0.2 1 0.5 2 5 Reverse Drain Current IDR (A) 10 Dynamic Input Characteristics 200 Drain to Source Voltage VDS (V) 160 VDD = 80 V 50 V 25 V VGS VDS 20 Gate to Source Voltage VGS (V) 16 500 Switching Characteristics Switching Time t (ns) 200 100 50 tf tr 20 10 td (on) 5 0.1 0.2 td (off) 120 12 80 40 8 4 VDD = 25 V 50 V 80 V 8 ID = 3 A VGS = 10 V, VDD = 30 V . PW = 2s, duty < 0.1 % 5 10 . 0 12 16 20 Gate Charge Qg (nc) 0 24 1 0.5 2 Drain Current ID (A) 2SK1299 L , 2SK1299 S Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) Pulse Test 8 6 5V 4 2 VGS = 10 V VGS = 0, - 5 V 0 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 TC = 25C 0.02 0.01 t Pulse 0.03 ho 1S ch-c (t) = s (t) * ch-c ch-c = 6.25C/W, TC = 25C PDM T 100 1m 10 m Pulse Width PW (s) 100 m PW 1 D =PW T 10 0.01 10 2SK1299 L , 2SK1299 S Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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